Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V.
نویسندگان
چکیده
We demonstrate a photonic microwave generator on the heterogeneous silicon-InP platform. Waveguide photodiodes with a 3 dB bandwidth of 65 GHz and 0.4 A/W responsivity are integrated with lasers that tune over 42 nm with less than 150 kHz linewidth. Microwave signal generation from 1 to 112 GHz is achieved.
منابع مشابه
Heterogeneously Integrated Microwave Signal Generators with Narrow- Linewidth Lasers
We explore photonic microwave signal generation utilizing the heterogeneous silicon-III/V platform and the benefits and execution of a fully integrated chip. Optimization of device components is discussed, including high-speed waveguide photodiodes and widely tunable lasers. Microwave signal generation is demonstrated beyond 110 GHz. Exploration into dual signal generation with a tracking fixed...
متن کاملFully tunable microwave photonic phase shifter for broadband signals based on a single heterogeneously integrated III-V-on-Silicon microdisk resonator
We present a novel broadband microwave photonic phase shifter based on a single III-V microdisk resonator heterogeneously integrated on a silicon-on-insulator waveguide. Fully 2π phase shift tunability is accomplished by free-carrierinduced effective index modulation.
متن کاملNovel Techniques for Fully Integrated RF CMOS Phase-Locked Loop Frequency Synthesizer
...................................................................................iii ACKNOWLEDGMENTS .............................................................................................v TABLE OF CONTENTS..............................................................................................vi LIST OF FIGURES ........................................................................
متن کاملA Fully Integrated 20-GHz Frequency Synthesizer in 0.13-μm BiCMOS
This paper presents a fully integrated 20-GHz frequency synthesizer based on an integer-N fourth-order type-II phase-locked loop (PLL). The PLL synthesizer employing a cross-coupled LC VCO was fabricated in a 0.13-μm SiGe:C BiCMOS process with a small chip area of 0.48 mm. The VCO core current is 4 mA. The full tuning range of the VCO is 2.21 GHz from 19.9 to 22.11 GHz, and the PLL can synthesi...
متن کاملA 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks
In this paper, a low power transceiver for wireless sensor networks (WSN) is proposed. The system is designed with fully functional blocks including a receiver, a fractional-N frequency synthesizer, and a class-E transmitter, and it is optimized with a good balance among output power, sensitivity, power consumption, and silicon area. A transmitter and receiver (TX-RX) shared input-output matchi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics express
دوره 25 3 شماره
صفحات -
تاریخ انتشار 2017